At room temperature an intrinsic semiconductor has a a few free electrons and holes b many holes c many free electrons d no holes e none of the above.
At room temperature an intrinsic semiconductor has.
An example is hg 0 8 cd 0 2 te at room temperature.
At room temperature i e 300 k a semiconductor made of gallium arsenide gaas has an intrinsic electron concentration ni of 1 8 10 6 cm 3 an electron mobility μe of 8500 cm 2 v 1 s 1 and a hole mobility μh of 400 cm 2 v 1 s 1.
A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.
The electrical conductivity of intrinsic semiconductors can be due to crystallographic defects or electron excitation.
When an electron leaves the valence band it creates a vacancy known as hole.
At room temperature 3 0 0 k e l v i n the electrons in the valence band are moved to the conduction band.
More than 1 billion.
Fewer than 1 billion.
In an intrinsic semiconductor the number of electrons in the conduction band is equal to the number of holes in the valence band.
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An external voltage source is applied to a p type semiconductor.
In intrinsic semiconductor number of free electrons is equal to number of holes.
If the temperature changes to 75 c how many holes are there.
An intrinsic semiconductor has some holes in it at room temperature.
Suppose an intrinsic semiconductor has 1 billion free electrons at room temperature.
Multiple choice questions and answers on semiconductor theory.
4 8 1 0 2 0 m 3 then the concentration of holes in the semiconductor is.
An intrinsic semiconductor is capable to conduct a little current even at room temperature but it is not useful for the preparation of various electronic devices.
None of the above.
4 the hall coefficient of certain silicon specimen was found to be 7 35 10 5 m 3 c 1 from 100 to 400 k.
6 1 0 1 6 m 3.
Thus to make it conductive a small amount of suitable impurity is added to the material.
A calculate the intrinsic electric conductivity and resistivity of gaas at 300 k.
What causes these holes.
The intrinsic carrier density at room temperature in ge is 2 37 10 19 m 3 if the electron and hole mobilities are 0 38 and 0 18 m 2 v 1 s 1 respectively calculate the resistivity.